With the iteration and upgrading of semiconductor power device technology, IGBT insulated gate bipolar transistors are gradually developing towards high voltage and high switching frequency. High frequency components ..
Key Features:
Two component, 1:5 mixture;
Excellent thermal conductivity;
Low stress, resistant to mechanical impact;
Low temperature (-40 ℃) to maintain flexibility, temperature resistance to 130 ℃, and resistance to thermal shock test
Not using halogen and phosphorus flame retardants;
heat accelerated room temperature curing,
UL-94 V-0 flame retardant certification;
Thermal conductivity 0.63W/mK
Application Industry
Automobiles, motorcycles, general industry
Application products:
Controller encapsulation, sensor encapsulation



With the iteration and upgrading of semiconductor power device technology, IGBT insulated gate bipolar transistors are gradually developing towards high voltage and high switching frequency. High frequency components ..
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Copyright: Shanghai Maxcess Materials Technology Co., Ltd Record number: Shanghai ICP No. 11019525-1sitemap